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- W1640706864 abstract "Si-doped n-type GaAs and Be-doped p-type GaAs have been grown on (111)B oriented GaAs substrates using the migration-enhanced epitaxy (MEE) technique, in which arsenic and gallium are deposited separately. The mobilities and carrier densities have been compared with GaAs grown by MEE and conventional epitaxy on GaAs (100) substrates. Under migration enhanced conditions, the range of substrate temperatures and arsenic fluxes to obtain smooth surfaces and good mobilities is wider than for conventional molecular-beam epitaxy, for both substrate orientations. High-quality doped GaAs material was obtained at substrate temperature as low as 400–450 °C on (111)B substrates." @default.
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- W1640706864 date "1992-03-01" @default.
- W1640706864 modified "2023-10-18" @default.
- W1640706864 title "Migration-enhanced epitaxy of doped GaAs on (111)B and (100)GaAs substrates" @default.
- W1640706864 doi "https://doi.org/10.1116/1.586114" @default.
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