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- W164073390 abstract "There are many similarities between the characteristics of the plasma sources needed for semi-conductor processing and those needed for fusion neutral beams. Both need useful plasma areas up to 20-30 cm in diameter and uniform plasma densities (<10% variation for fusion with a factor of about three better needed for semiconductor processing). The evolution of fusion ion sources suggested a development strategy for improved semiconductor processing sources. The first step in this path has now been carried out at ORNL and has produced encouraging results. This progress suggests that this line of development has a good chance of meeting semiconductor processing needs. 2 refs., 5 figs." @default.
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- W164073390 date "1989-01-01" @default.
- W164073390 modified "2023-09-27" @default.
- W164073390 title "Characteristics of the ORNL ECR multipole plasma source" @default.
- W164073390 hasPublicationYear "1989" @default.
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