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• W1642342780 abstract "In this paper multi-layer “Por-Si-on-Insulator”/SnOx sensor structures based on porous silicon and non-stoichiometric tin oxide are fabricated and studied. Two-layer structures “macro-porous silicon–meso-porous silicon”, with two types of porous silicon, bound by skeleton elements on a single substrate are grown. Oxide on macro-porous silicon walls and a buried layer of oxidized meso-porous silicon play the role of the insulator. Non-stoichiometric tin oxide deposited onto the extended surface of oxidized macro-porous silicon by magnetron sputtering process is the sensitive layer. The gas sensitivity is studied upon exposure to CO and H2S. The sensitivity of the multi-layer “Por-Si-on-Insulator”/SnOx sensor structures is higher than the sensitivity of tin-oxide film samples." @default.
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• W1642342780 date "2015-01-01" @default.
• W1642342780 modified "2023-10-11" @default.
• W1642342780 title "Multi-Layer Structures “Por-Si-on-insulator”/SnOx for Gas Sensing Application" @default.
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• W1642342780 doi "https://doi.org/10.1016/j.proeng.2015.07.343" @default.
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