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- W1645333392 abstract "We investigated the possible origin of 1/f fluctuations in HgCd0.71Te0.29 (Eg=0.254 eV at 90 K) Metal‐Insulator‐Semiconductor (MIS) charge integrating structures. These structures are used for infrared detection, usually in conjunction with a correlated double sampling (CDS) circuit. By varying the reset voltage, the inject pulse voltage in the CDS circuit and the charge integration time, we were able to change the charge well size, the magnitude of the dark current, and the position of the electron Quasi‐Fermi levels at the semiconductor‐insulator interface, which enabled us to investigate the role of each in generating 1/f fluctuations in these structures. Bulk and surface mechanisms were considered. In the light of the experimental data, dark current originated bulk mechanisms were ruled out as the origin of 1/f fluctuations. Interface‐trap originated charge fluctuations theory, on the other hand yielded values for HgCdTe–ZnS interface states which were comparable to that obtained by other independent techniques." @default.
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- W1645333392 date "1993-01-01" @default.
- W1645333392 modified "2023-10-08" @default.
- W1645333392 title "Sources of 1/f noise in HgCdTe metal-insulator-semiconductor charge integrating structures" @default.
- W1645333392 doi "https://doi.org/10.1063/1.44685" @default.
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