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- W1646292344 abstract "Studies of low-dimensional electron systems subject to an in-plane magnetic field have come to the focus of intense attention recently. In several experiments the influence of an in-plane magnetic field on two- and one-dimensional electrons in semiconductor heterostructures [, ] as well as in lateral quantum dot devices [] has been investigated. The use of the fairly unconventional in-plane field geometry aimed at achieving a stronger magnetic field influence on the 2D electron spin, thus, compensating the dominance of orbital effects in most of the known semiconductor materials. Then, by manipulating the field-induced spin polarization, one may extract information about the ground state properties of interacting electrons. At low temperatures—i.e., in the regime where electron- electron interactions open the possibility of a metal-insulator transition or the ferromagnetic Stoner instability—interaction effects coexist with single-particle interference effects. The aim of this article is to provide a theoretical overview of possible influences of an in-plane magnetic field on single-particle quantum transport phenomena in semiconductor heterostructures, quantum wells, and lateral dots." @default.
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- W1646292344 date "2002-01-01" @default.
- W1646292344 modified "2023-09-25" @default.
- W1646292344 title "Quantum In-Plane Magnetoresistance in 2D Electron Systems" @default.
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- W1646292344 doi "https://doi.org/10.1007/978-94-010-0530-2_7" @default.
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