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- W165078839 abstract "The geometric surface structure and atomic constituents in the outermost layers of both unimplanted and implanted Si single crystals have been examined with low energy electron diffraction (LEED) and Auger electron spectroscopy (AES) after pulsed laser annealing in ultra-high-vacuum (UHV). Atomically clean surfaces, from which high quality LEED patterns were obtained were produced by 5 laser pulses. The implanted species profiles obtained after 10–15 pulses showed a nearly uniform concentration to a depth of ˜4000 A followed by a near step function gradient at this depth." @default.
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- W165078839 date "1980-01-01" @default.
- W165078839 modified "2023-10-05" @default.
- W165078839 title "SILICON SURFACE STRUCTURE AND SURFACE IMPURITIES AFTER PULSED LASER ANNEALING" @default.
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- W165078839 doi "https://doi.org/10.1016/b978-0-12-746850-1.50031-1" @default.
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