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• W1652870888 abstract "MOSFETs with a zirconium dioxide (ZrO/sub 2/) gate dielectric and poly-silicon gate were fabricated using a low temperature CMOS process. Well-behaved transistor characteristics were obtained for devices with sizes of 14 /spl mu/m/spl times/1.4 /spl mu/m or smaller. Devices 14 /spl mu/m/spl times/14 /spl mu/m or larger were found to be nonfunctional due to the formation of Zr-silicide at the polySi-gate/Zr0/sub 2/ interface. In this paper, we present results on the electrical and physical characterization." @default.
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• W1652870888 date "2002-11-13" @default.
• W1652870888 modified "2023-10-05" @default.
• W1652870888 title "Sub-quarter micron Si-gate CMOS with ZrO/sub 2/ gate dielectric" @default.
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• W1652870888 doi "https://doi.org/10.1109/vtsa.2001.934520" @default.
• W1652870888 hasPublicationYear "2002" @default.
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