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• W1653089650 abstract "Within a model of the compensated shallow acceptor classical impurity band, we study the optical absorption of CdTe and Cd1−xZnxTe, at energies of 20–70 meV below the energy gap connected with acceptor–conduction band transitions. The shape of the absorption edge is fitted by Monte Carlo numerical simulations and we estimate the total density of charged impurities, which is hardly detectable by other experimental techniques. The activation energy ≈59 meV and density ∼1014 cm−3 of the dominant shallow acceptor level are reported." @default.
• W1653089650 created "2016-06-24" @default.
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• W1653089650 date "2002-11-13" @default.
• W1653089650 modified "2023-09-23" @default.
• W1653089650 title "Defect-induced optical transitions in CdTe and Cd_0.96Zn_0.04Te" @default.
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• W1653089650 doi "https://doi.org/10.1088/0268-1242/17/12/313" @default.
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