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- W1654027706 abstract "ABSTRACT In this paper, the polymer composition generated by three different combinations of gas chemistries for oxide etchare studied and the effects of different 02 plasma strip duration on polymer removal are also presented. The etch chemistries used were CHF3/CF4, CO/CF4/CHF3 and C4F8/COICHF3 chemistry. From the X-ray photoelectron spectroscopy (XPS) C isspectra, five distinct peaks are identified which correspond to C-C, C-CF, CF, CF2 and CF3. The C/F ratio is found to behighest for polymer generated by the C4F8/CO/CHF3 chemistry, about 0.8, whereas the C/F ratios for those by CHF3/CF4 andCO/CFICHF3 chemistries are about 0.6. Atomic force microscopy (AFM) images show that the polymer generated by the C4F8/CO/CHF3 chemistry is much rougher than that by CHF3/CF4 and CO/CF4/CHF3 chemistries. The XPS spectra of C is also show a significant decrease in the intensity ofthe more fluorinated carbon peaks (CF3and CF2) after 02 plasma strip. The C/F ratios increased to about i.4 to i .8 after 02 plasma strip. The spectra are similar fordifferent 02 strip times, indicating the decrease is independent of 02 strip duration. From the AFM images, all the polymersformed by CHF3/CF4 and CO/CF4/CHF3 chemistries are rather smooth with no visible change after 02 strip. However, thepolymers generated by C4F8/CO/CHF3 chemistry are flattened with increasing 02 strip duration. The high energy ionbombardment of oxygen ions probably have flattened the rough polymer surface.Keywords: Si02 etching, fluorocarbon polymer, CHF3, CF4, C4F8, C/F ratio, XPS, AFM, 02 strip" @default.
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- W1654027706 date "1997-08-27" @default.
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- W1654027706 title "Characterization of polymer formation during SiO 2 etching with different fluorocarbon gases (CHF 3 , CF 4 , C 4 F 8 )" @default.
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- W1654027706 doi "https://doi.org/10.1117/12.284614" @default.
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