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- W1654148744 abstract "We report a technique for epitaxial thin-film growth by combination of selective heteroepitaxial and lateral homoepitaxial growth. (Ba,Sr)TiO3 (BST) thin films were deposited on LaAlO3 having amorphous SiOx masking layers with stripe patterns at 450 °C by pulsed-laser deposition. Postannealing was carried out thereafter for lateral epitaxial growth. The difference in BST nucleation temperatures from the amorphous masking regions and lattice-matched single-crystalline substrates enables selective nucleation. Heteroepitaxial growth takes place in the regions of single-crystalline substrates, whereas lateral homoepitaxial growth evolves from the crystallized BST towards the SiOx masked region during postannealing process." @default.
- W1654148744 created "2016-06-24" @default.
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- W1654148744 date "2003-12-29" @default.
- W1654148744 modified "2023-09-23" @default.
- W1654148744 title "Lateral epitaxial growth of (Ba,Sr)TiO3 thin films" @default.
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- W1654148744 doi "https://doi.org/10.1063/1.1637445" @default.
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