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- W1655922170 abstract "Self-assembled GaN quantum dots (QDs) in AlxGa1−xN (0.3 ≤ x ≤ 1) were grown on c-plane sapphire and Si (111) substrates by molecular beam epitaxy using ammonia as nitrogen source. The QD formation temperature was varied from 650 °C to 800 °C. Surprisingly, the density and size of QDs formed in this temperature range are very similar. This has been explained by considering together experimental results obtained from reflection high-energy electron diffraction, atomic force microscopy, and photoluminescence to discuss the interplay between thermodynamics and kinetics in the QD formation mechanisms. Finally, possible ways to better control the QD optical properties are proposed." @default.
- W1655922170 created "2016-06-24" @default.
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- W1655922170 date "2015-07-13" @default.
- W1655922170 modified "2023-10-16" @default.
- W1655922170 title "Formation of GaN quantum dots by molecular beam epitaxy using NH3 as nitrogen source" @default.
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- W1655922170 doi "https://doi.org/10.1063/1.4923425" @default.
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