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- W165615067 abstract "摘要 在电容测量的基础上研究了薄隧道氧化层在恒定Fowler-Nordheim(F-N)隧穿电流下的退化情况. 这种退化是恒流应力和时间的函数，对恒流应力大小的依赖性更加强烈，隧道氧化层在F-N电流下的退化是注入电荷密度(Qinj)的函数. 在较低Qinj下氧化层中发生正电荷俘获，在较高Qinj下发生负电荷俘获，导致栅压变化的反复. 关键词: E2PROM / 隧道氧化层 / 退化 / 恒流应力 Abstract The degradation of thin tunnel gate oxide under constant Fowler-Nordheim current stress was studied using capacitors.The degradation is a function of constant current and time，which depends more on the magnitude of constant current.Thus the degradation is a strong function of injected charge density Qinj. Positive charge trapping is usually dominant at lower Qinj followed by negative charge trapping at higher Qinj，causing a reversal of gate voltage change. Keywords: E2PROM / tunnel oxide / degradation / constant current stress 作者及机构信息 李蕾蕾, 刘红侠, 于宗光, 郝 跃 1. 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室，西安 710071 基金项目: 国家高技术研究发展计划(批准号：2004AA1Z1070)和国家自然科学基金(批准号：60376024)资助的课题. Authors and contacts Li Lei-Lei, Liu Hong-Xia, Yu Zong-Guang, Hao Yue 1. 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室，西安 710071 参考文献 施引文献" @default.
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- W165615067 date "2006-01-01" @default.
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- W165615067 title "Degradation of tunnel oxide in E2PROM under constant current stress" @default.
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