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• W1657303944 abstract "In semiconductor devices, low-frequency noise typically results from fluctuations in the number of carriers due to charge exchange between the channel and defects at or near a critical semiconductor/insulator interface. Measurements of noise magnitude and its temperature and/or voltage dependence often enable estimates of the effective energy distributions of defects that lead to 1/f noise. The microstructures of several defects and/or impurities that cause noise in microelectronic devices and materials have been identified via experiments and first-principles calculation. Examples are shown for Si- and SiC-based MOS devices and GaN-based HEMTs." @default.
• W1657303944 created "2016-06-24" @default.
• W1657303944 creator A5083682498 @default.
• W1657303944 date "2015-06-01" @default.
• W1657303944 modified "2023-09-26" @default.
• W1657303944 title "Energies and microstructures of defects contributing to 1/f noise in microelectronic materials and devices" @default.
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• W1657303944 doi "https://doi.org/10.1109/icnf.2015.7288627" @default.
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