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- W1658886768 abstract "Abstract : Advanced microfabrication processes have been developed for novel high temperature pressure sensors utilizing diamond and SiC materials. Such sensors represent a new generation of high temperature piezoresistive sensors. The accomplishments of Phase I include the following: (a) Growth of polycrystalline diamond on Beta-SiC substrates. (b) The first isolated p-type diamond resistive elements grown on intrinsic diamond. (c) Establishment of microfabrication processes for sensor manufacture. (d) Demonstration of a large piezoresistive effect in poly-diamond. (e) Demonstration of a new field- assisted-bonding process which allows dielectrically isolated SiC elements to be formed." @default.
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- W1658886768 date "1992-12-31" @default.
- W1658886768 modified "2023-09-27" @default.
- W1658886768 title "SiC Microsensor with Piezoresistive Diamond Sensing Elements" @default.
- W1658886768 hasPublicationYear "1992" @default.
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