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- W1661353132 abstract "We investigate the dielectric breakdown of aluminum oxide (Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> ) interfacial layers compared with SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> used in the high- k gate dielectric stacks. We predict the maximum operating voltage for a ten-year lifetime, using extracted values of Weibull β, voltage power law exponent (n), and breakdown voltage. We show that the Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> interface layer reliability is sufficient for it to be considered as a replacement for SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ." @default.
- W1661353132 created "2016-06-24" @default.
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- W1661353132 date "2014-03-01" @default.
- W1661353132 modified "2023-09-26" @default.
- W1661353132 title "Dielectric Breakdown of $hbox{Al}_{2}hbox{O}_{3}/ hbox{HfO}_{2}$ Bi-Layer Gate Dielectric" @default.
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- W1661353132 doi "https://doi.org/10.1109/tdmr.2013.2292940" @default.
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