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• W1664487934 abstract "O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /Ar ratio and growth temperature during the deposition process of HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> thin film have the significant effect on the OFF-state current of Al/HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> /ITO devices. In order to enhance the quality of HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> layer, HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> thin film was sputtered at 300-700 K in a mixed ambient of Ar and oxygen. For HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> thin films deposited at 500 K with O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /Ar ratio of 0.2, the resistive switching ratio is enhanced by five orders of magnitude. The resistive switching I-V characteristics at 120-300 K were investigated. Using temperature-dependent transport in HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> thin film, two transport mechanisms cocontribute to the high resistance state current: the correlated barrier hopping conduction and the weak metallic filamentary conduction." @default.
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• W1664487934 date "2014-05-01" @default.
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• W1664487934 title "Effects of O<formula formulatype=inline><tex Notation=TeX>$_{bf 2}$</tex></formula>/Ar Ratio and Growth Temperature on Resistive Switching Characteristics of Al/HfO<formula formulatype=inline><tex Notation=TeX>$_{bm x}$</tex> </formula>/ITO Memory Devices" @default.
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