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- W1665148940 abstract "Energy band profile of ultrathin Hf silicate dielectrics, grown by atomic layer deposition, was studied by using x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap energy only slightly increases from 5.52eV for (HfO2)0.75(SiO2)0.25 to 6.10eV for (HfO2)0.25(SiO2)0.75, which is much smaller than 8.90eV for SiO2. For ultrathin Hf silicate dielectrics, the band gap is mainly determined by the Hf 5d conduction band state and the O 2p valence band state. The corresponding conduction band offsets are in the vicinity of 1eV, which satisfies the minimum requirement for the carrier barrier heights." @default.
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- W1665148940 date "2006-09-18" @default.
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- W1665148940 title "Band gap and band offsets for ultrathin (HfO2)x(SiO2)1−x dielectric films on Si (100)" @default.
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- W1665148940 doi "https://doi.org/10.1063/1.2355453" @default.
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