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• W1668283896 endingPage "7291" @default.
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• W1668283896 abstract "Most common contact metals show low thermal stabilities on ZnO and there is a clear need for more thermally stable metallization. The formation of rectifying contacts on n-type bulk single crystal ZnO using CrB 2 was studied using current–voltage, scanning electron microscopy (SEM) and Auger Electron Spectroscopy (AES) measurements. When a single Au overlayer was used to reduce the metal sheet resistance, the contacts were ohmic for all annealing conditions. Under these conditions, both Zn and O were observed to outdiffuse from the ZnO. When a bilayer of Pt/Au was used on top of the CrB 2 layers, rectifying contacts with barrier heights of ∼0.4 eV were obtained after annealing at 600°C, although at this condition the contact showed a reacted appearance and AES showed the onset of intermixing of the metallization. At higher anneal temperatures (700°C) the contact metallization showed blistering and loss of adhesion." @default.
• W1668283896 created "2016-06-24" @default.
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• W1668283896 date "2005-10-01" @default.
• W1668283896 modified "2023-10-18" @default.
• W1668283896 title "Improved Thermal Stability CrB₂ Contacts on ZnO" @default.
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• W1668283896 doi "https://doi.org/10.1143/jjap.44.7291" @default.
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