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• W1668532387 abstract "Nonalloyed ohmic contacts regrown by molecular beam epitaxy were made on InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs). Transmission-line-method measurements were carried out from 4 K to 350 K. Although the total contact resistance is dominated by the <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$hbox{metal}/ hbox{n}^{+}hbox{-}hbox{GaN}$</tex></formula> resistance ( <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$sim$</tex></formula> 0.16 <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$Omegacdothbox{mm}$</tex></formula> ), the resistance induced by the interface between the regrown <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$hbox{n}^{+}$</tex></formula> GaN and HEMT channel is found to be 0.05–0.075 <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$Omegacdothbox{mm}$</tex></formula> over the entire temperature window, indicating a minimal barrier for electron flow at the as-regrown interface. The quantum contact resistance theory suggests that the interface resistance can be further reduced to be <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$<$</tex></formula> 0.02 <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$Omegacdot hbox{mm}$</tex></formula> in GaN HEMTs." @default.
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• W1668532387 date "2012-04-01" @default.
• W1668532387 modified "2023-10-06" @default.
• W1668532387 title "MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $Omegacdothbox{mm}$" @default.
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• W1668532387 doi "https://doi.org/10.1109/led.2012.2186116" @default.
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