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• W1669287089 abstract "We demonstrate the deposition of periodic arrays of uniformly sized GaN quantum dots onto a SiOx substrate. The dots are deposited using a nanolithography technique based on a combination of electron-beam-induced chemical vapor deposition and single-source molecular hydride chemistries. Under appropriate deposition conditions, we can deposit uniform dots of height 5 nm and full widths at half-maxima of 4 nm. The dot size is controlled by the spatial distribution of secondary electrons leaving the substrate surface. The smallest, most uniform void-free dots are created via nanolithography of molecules adsorbed on the substrate surface." @default.
• W1669287089 created "2016-06-24" @default.
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• W1669287089 date "2004-04-20" @default.
• W1669287089 modified "2023-10-08" @default.
• W1669287089 title "Synthesis of uniform GaN quantum dot arrays via electron nanolithography of D2GaN3" @default.
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• W1669287089 doi "https://doi.org/10.1063/1.1736314" @default.
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