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• W1669766332 abstract "High-quality epitaxial Pt films were grown by a sputtering deposition method using epitaxial Y2O3 as a dielectric buffer layer. A high degree of crystallinity was achieved with an ion-beam minimum channeling yield (χmin) of ∼11%, and a high degree of coherence between the film surface and interface was obtained for the Pt(111)/Y2O3(111)/Si, with a large lattice mismatch. High-resolution transmission electron microscopy results showed that the atomic arrangement at the interface between the Pt and the oxide was well ordered, and no perceptible interdiffusion was observed, even at an annealing temperature of up to 700 °C under an oxygen atmosphere. The atomic arrangement at the Pt/Y2O3 interface was drastically degraded after a high-temperature annealing at 900 °C due to the deformation of Y2O3." @default.
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• W1669766332 date "2003-12-02" @default.
• W1669766332 modified "2023-10-17" @default.
• W1669766332 title "Thermal stability of epitaxial Pt films on Y2O3 in a metal-oxide–Si structure" @default.
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• W1669766332 doi "https://doi.org/10.1063/1.1632541" @default.
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