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- W1669818014 abstract "In a standard 0.5 μm single well technology, a deep N‐well is constructed using a 150 keV P implant at a dose of 1e13 at/cm2 and driven to a final depth of 4 μm. To make this N‐well suitable for automotive battery applications it is constructed with 2 μm P‐tub enclosure. Use of a high energy (780 keV P+++) implant streamlined the requisite long diffusion cycle such that it could be processed in a standard diffusion drive. While this resulted in longer implant times, it reduced the overall cycle time for a low volume, high voltage custom devices." @default.
- W1669818014 created "2016-06-24" @default.
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- W1669818014 date "2008-01-01" @default.
- W1669818014 modified "2023-09-24" @default.
- W1669818014 title "Using Ion Implantation to Streamline High Volt Processing in Standard CMOS" @default.
- W1669818014 doi "https://doi.org/10.1063/1.3033566" @default.
- W1669818014 hasPublicationYear "2008" @default.
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