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- W1670290568 abstract "The growth of good optical quality GaAs layers on Si is reported using thin nucleation layer grown by atomic layer epitaxy (ALE) technique in an MOCVD reactor. The GaAs/Si heteroepitaxial layers grown by this method are characterized by micro-Raman and photoluminescenec techniques and are compared to that grown by other two-step growth processes. It is found that the ALE assisted growth of GaAs/Si results in low density of antiphase domains and, electron-traps as compared to the two-step. growth, which leads to high minority carrier lifetimes so essential for device fabrications." @default.
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- W1670290568 date "1998-01-01" @default.
- W1670290568 modified "2023-09-22" @default.
- W1670290568 title "Micro-Raman Characterization of GaAs/Si with Atomic Layer Epitaxy Grown Predeposition Layers" @default.
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