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- W1670813381 abstract "A method for calculating detailed electronic properties of the pseudobinary III-V compound semiconductor alloys is presented. The technique begins with realistic band structures obtained for the constituent compounds by fitting the band-gap symmetry-point energies and effective masses to experimental data, where they are available, and to more sophisticated theoretical results. Then the coherent-potential approximation is used to calculate the alloy band structures and scattering rates. Detailed comparisons between the theoretical predictions and experimental data for three alloys ${mathrm{Al}}_{x}{mathrm{Ga}}_{1ensuremath{-}x}mathrm{As}$, $mathrm{Ga}{mathrm{P}}_{x}{mathrm{As}}_{1ensuremath{-}x}$, and ${mathrm{Ga}}_{x}{mathrm{In}}_{1ensuremath{-}x}mathrm{P}$ demonstrate the quantitative nature of the method. Bowing parameters for the $ensuremath{Gamma}$, $X$, and $L$ gaps and the direct-to-indirect band-gap crossover concentrations are all predicted to within the present degree of experimental certainty." @default.
- W1670813381 created "2016-06-24" @default.
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- W1670813381 date "1981-05-15" @default.
- W1670813381 modified "2023-10-09" @default.
- W1670813381 title "Electronic structure of pseudobinary semiconductor alloys<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=normal>Al</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=normal>Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml…" @default.
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- W1670813381 doi "https://doi.org/10.1103/physrevb.23.5360" @default.
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