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- W1672553959 abstract "The advent of very large scale integration will requiresubstantial progress in all aspects of silicon technology:processing, lithography, modeling, design tools, chip architecture, and applications This paper will survey current trends in silicon integrated circuit fabrication, focusing on new developments and outstanding problems. Progress in both bipolar and MOSFET technologies will be considered. Silicon fabrication techniques will be described in terms of the repetitious application of operations that are additive (oxidation, doping, deposition), selective (lithography), andsubtractive (etching). The objective of these operations is a reliable and predictable device structure. Device structures will be described in terms of isolation areas, devices, contacts (intraconnection vias), wiring (interconnection lines), and passivation. Immediate problems in isolation size, device performance, contact resistance, and wiring topography will be identified. Future needs for improved structures will be indicated. Promising new approaches such as lightly-dopeddrain FETs and silicide-on-polysilicon (polycide) wiringwill be described. Throughout this discussion the importanceof process modeling will be emphasized." @default.
- W1672553959 created "2016-06-24" @default.
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- W1672553959 date "1981-01-01" @default.
- W1672553959 modified "2023-09-28" @default.
- W1672553959 title "Trends in Silicon Processing" @default.
- W1672553959 hasPublicationYear "1981" @default.
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