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• W1673169002 abstract "The electrical and optical reliability characteristics of a Pt/HfO/sub 2/ gate stack have been investigated. Incorporating deuterium and hydrogen treatment during post-metallization annealing is employed to improve both the electrical and optical reliability of the Pt/HfO/sub 2/ gate stack. For comparison, deuterium-treated technology provides slightly better reliability improvement on both the electrical and optical reliability of Pt/HfO/sub 2/ gate stack devices." @default.
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• W1673169002 date "2004-10-26" @default.
• W1673169002 modified "2023-09-27" @default.
• W1673169002 title "Electrical and optical reliability improvement of HfO/sub 2/ gate dielectric by deuterium and hydrogen incorporation" @default.
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• W1673169002 doi "https://doi.org/10.1109/ipfa.2004.1345578" @default.
• W1673169002 hasPublicationYear "2004" @default.
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