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- W167366948 abstract "To eliminate the forming process in resistive random access memory (RRAM), we introduced nitrogen into AlO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> layer to generate a moderate amount of traps inside the film. The composition of nitrogen-doped AlO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> (N-AlO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> ) RRAM is revealed by X-ray photoelectron spectroscopy and X-ray diffraction analyses. To understand the current conduction mechanism of N-AlO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> RRAM, we investigated field and temperature dependence of the charge transport. Based on the extracted trap levels of high-resistance state and various low-resistance states, the current conduction is found to be governed by Frenkel-Poole emission. An energy band model is also proposed to clarify the current conduction mechanism and switching behavior of N-AlO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> RRAM." @default.
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- W167366948 date "2014-06-01" @default.
- W167366948 modified "2023-10-18" @default.
- W167366948 title "Current Conduction Mechanism of Nitrogen-Doped ${rm AlO}_{x}$ RRAM" @default.
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- W167366948 doi "https://doi.org/10.1109/ted.2014.2319074" @default.
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