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- W1677002023 abstract "X‐ray computed tomography (XCT) offers powerful non‐destructive three dimensional imaging capability widely used in diverse fields, including medical diagnosis, biomedical and material research, geology, petrology, and archeology. XCT with micrometer resolution is being rapidly adopted for semiconductor packaging process development and failure analysis by creating virtual cross sections without the time consuming destructive cross sectioning processes. Thanks to rapid advancements in x‐ray imaging technology, XCT with 30 nm and 50 nm resolution (nanoXCT) has been developed using synchrotron and laboratory x‐ray sources, respectively. The nanoXCT can image internal structures of semiconductor IC devices that are fabricated using the latest IC manufacturing technology. This new capability is very valuable to the characterization of semiconductor interconnects for process development and failure analysis. We will present the design, specification, and operation of the nanoXCT. 2D and 3D tomographic reconstruction images from IC devices will be presented to show the tomography microscope’s outstanding performances." @default.
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- W1677002023 date "2009-01-01" @default.
- W1677002023 modified "2023-09-25" @default.
- W1677002023 title "X-ray Microscopy for Interconnect Characterization" @default.
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- W1677002023 doi "https://doi.org/10.1063/1.3251210" @default.
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