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- W1679491844 abstract "Semiconductor light emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices 1-3. Light sources based on group-IV elements would be SIT compatible but suffer from the poor optoelectronic properties of bulk Si and Ge. Here, we demonstrate that epitaxially grown Ge quantum dots (QDs) in a fully coherent Si matrix show extraordinary optical properties if partially amorphised by Ge-ion bombardment (GIB). The GIB-QDs exhibit a quasi-direct-band gap and show, in contrast to conventional SiGe nanostructures, almost no thermal quenching of the photoluminescence (PL) up to room-temperature (RT). Microdisk resonators with embedded GIB-QDs exhibit threshold-behaviour and super-linear increase of the integrated PL-intensity (IPL) with increasing excitation power Pexc which indicates light amplification by stimulated emission in a fully SIT-compatible group-IV nano-system." @default.
- W1679491844 created "2016-06-24" @default.
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- W1679491844 date "2016-02-04" @default.
- W1679491844 modified "2023-10-15" @default.
- W1679491844 title "Lasing from Glassy Ge Quantum Dots in Crystalline Si" @default.
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- W1679491844 doi "https://doi.org/10.1021/acsphotonics.5b00671" @default.
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