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• W1691016434 startingPage "L1370" @default.
• W1691016434 abstract "Epitaxial layers of AlAs 1- x Sb x have been prepared by metalorganic vapor phase deposition (MOCVD) in a horizontal, atmospheric-pressure quartz reactor. The influences of the V/III ratio and the input partial pressure of trimethylantimony were systematically studied. The experimental results are in good agreement with the calculated ones, based on thermodynamic considerations, which implies that the growth of AlAsSb in MOCVD is controlled predominantly by thermodynamics." @default.
• W1691016434 created "2016-06-24" @default.
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• W1691016434 date "1994-10-01" @default.
• W1691016434 modified "2023-10-18" @default.
• W1691016434 title "Influence of Thermodynamic Factors on Growth of AlAs_1-xSb_x Alloys" @default.
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• W1691016434 doi "https://doi.org/10.1143/jjap.33.l1370" @default.
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