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• W16920147 abstract "GaN implanted with donor (Si, S, Se, Te) or acceptor (Be, Mg, C) species was annealed at 900-1500 C using AlN encapsulation. No redistribution was measured by SIMS for any of the dopants and effective diffusion coefficients are {le}2 x 10{sup {minus}13} cm{sup 2} {center_dot} s{sup {minus}1} at 1400 C, except Be, which displays damage-enhanced diffusion at 900 C and is immobile once the point defect concentration is removed. Activation efficiency of {approximately}90% is obtained for Si at 1400 C. TEM of the implanted material shows a strong reduction in lattice disorder at 1400-1500 C compared to previous results at 1100 C. There is minimal interaction of the sputtered AlN with GaN under our conditions, and it is readily removed selectively with KOH." @default.
• W16920147 created "2016-06-24" @default.
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• W16920147 date "1999-01-27" @default.
• W16920147 modified "2023-09-24" @default.
• W16920147 title "Rapid Thermal Processing of Implanted GaN up to 1500 Degree C" @default.
• W16920147 hasPublicationYear "1999" @default.
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