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Matches in SemOpenAlex for { <https://semopenalex.org/work/W1694040410> ?p ?o ?g. }

• W1694040410 endingPage "179" @default.
• W1694040410 startingPage "141" @default.
• W1694040410 abstract "This chapter focuses on the application and properties of ionized physical vapor deposition films in the microelectronics industry. The chapter gives a brief overview of the process flow of integrated circuits (ICs) during the metallization process. A discussion of the process results achieved with I-PVD sources follows, along with descriptions of specific applications. The I-PVD sources are used for several applications in microelectronic manufacturing. Process qualification for manufacturing involves several steps. The new process is integrated with all prior and subsequent process operations. For example, introducing an I-PVD liner/barrier process requires that subsequent plug fill operations provide mechanically stable fills. In the case of W plug fill, the W must be shown to adhere well to the I-PVD liner/barrier with no peeling or attack of the liner, and the W fill must show no keyholes. In the case of Al plug fill, the fill must show no voids, and at contact level there can be no penetration of the Al through the I-PVD barrier into the Si devices." @default.
• W1694040410 created "2016-06-24" @default.
• W1694040410 creator A5046216024 @default.
• W1694040410 date "2000-01-01" @default.
• W1694040410 modified "2023-09-26" @default.
• W1694040410 title "Applications and properties of ionized physical vapor deposition films" @default.
• W1694040410 cites W1973947465 @default.
• W1694040410 cites W1978585953 @default.
• W1694040410 cites W1986768909 @default.
• W1694040410 cites W1991527974 @default.
• W1694040410 cites W1996215822 @default.
• W1694040410 cites W1996591077 @default.
• W1694040410 cites W2002651922 @default.
• W1694040410 cites W2003292059 @default.
• W1694040410 cites W2003980032 @default.
• W1694040410 cites W2008651674 @default.
• W1694040410 cites W2008783228 @default.
• W1694040410 cites W2018506029 @default.
• W1694040410 cites W2021296107 @default.
• W1694040410 cites W2033992382 @default.
• W1694040410 cites W2039746819 @default.
• W1694040410 cites W2040179900 @default.
• W1694040410 cites W2040729221 @default.
• W1694040410 cites W2040893700 @default.
• W1694040410 cites W2045803897 @default.
• W1694040410 cites W2048537894 @default.
• W1694040410 cites W2050332852 @default.
• W1694040410 cites W2053871808 @default.
• W1694040410 cites W2079779641 @default.
• W1694040410 cites W2081811986 @default.
• W1694040410 cites W2085314065 @default.
• W1694040410 cites W2085945284 @default.
• W1694040410 cites W2086277883 @default.
• W1694040410 cites W2091545311 @default.
• W1694040410 cites W2099511917 @default.
• W1694040410 cites W2109089871 @default.
• W1694040410 cites W2111150795 @default.
• W1694040410 cites W2133420679 @default.
• W1694040410 cites W2139303819 @default.
• W1694040410 doi "https://doi.org/10.1016/s1079-4050(00)80008-3" @default.
• W1694040410 hasPublicationYear "2000" @default.
• W1694040410 type Work @default.
• W1694040410 sameAs 1694040410 @default.
• W1694040410 citedByCount "3" @default.
• W1694040410 countsByYear W16940404102014 @default.
• W1694040410 crossrefType "book-chapter" @default.
• W1694040410 hasAuthorship W1694040410A5046216024 @default.
• W1694040410 hasConcept C111919701 @default.
• W1694040410 hasConcept C127413603 @default.
• W1694040410 hasConcept C151730666 @default.
• W1694040410 hasConcept C164205550 @default.
• W1694040410 hasConcept C171250308 @default.
• W1694040410 hasConcept C187937830 @default.
• W1694040410 hasConcept C19067145 @default.
• W1694040410 hasConcept C192562407 @default.
• W1694040410 hasConcept C2816523 @default.
• W1694040410 hasConcept C2986596850 @default.
• W1694040410 hasConcept C41008148 @default.
• W1694040410 hasConcept C51576277 @default.
• W1694040410 hasConcept C57410435 @default.
• W1694040410 hasConcept C61696701 @default.
• W1694040410 hasConcept C64297162 @default.
• W1694040410 hasConcept C78519656 @default.
• W1694040410 hasConcept C86803240 @default.
• W1694040410 hasConcept C98045186 @default.
• W1694040410 hasConceptScore W1694040410C111919701 @default.
• W1694040410 hasConceptScore W1694040410C127413603 @default.
• W1694040410 hasConceptScore W1694040410C151730666 @default.
• W1694040410 hasConceptScore W1694040410C164205550 @default.
• W1694040410 hasConceptScore W1694040410C171250308 @default.
• W1694040410 hasConceptScore W1694040410C187937830 @default.
• W1694040410 hasConceptScore W1694040410C19067145 @default.
• W1694040410 hasConceptScore W1694040410C192562407 @default.
• W1694040410 hasConceptScore W1694040410C2816523 @default.
• W1694040410 hasConceptScore W1694040410C2986596850 @default.
• W1694040410 hasConceptScore W1694040410C41008148 @default.
• W1694040410 hasConceptScore W1694040410C51576277 @default.
• W1694040410 hasConceptScore W1694040410C57410435 @default.
• W1694040410 hasConceptScore W1694040410C61696701 @default.
• W1694040410 hasConceptScore W1694040410C64297162 @default.
• W1694040410 hasConceptScore W1694040410C78519656 @default.
• W1694040410 hasConceptScore W1694040410C86803240 @default.
• W1694040410 hasConceptScore W1694040410C98045186 @default.
• W1694040410 hasLocation W16940404101 @default.
• W1694040410 hasOpenAccess W1694040410 @default.
• W1694040410 hasPrimaryLocation W16940404101 @default.
• W1694040410 hasRelatedWork W1694040410 @default.
• W1694040410 hasRelatedWork W2034051745 @default.
• W1694040410 hasRelatedWork W2154513612 @default.
• W1694040410 hasRelatedWork W2248754938 @default.
• W1694040410 hasRelatedWork W2281292440 @default.
• W1694040410 hasRelatedWork W2290333900 @default.
• W1694040410 hasRelatedWork W2365286017 @default.
• W1694040410 hasRelatedWork W2374058906 @default.
• W1694040410 hasRelatedWork W2374439065 @default.
• W1694040410 hasRelatedWork W3177905752 @default.
• W1694040410 isParatext "false" @default.
• W1694040410 isRetracted "false" @default.

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