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• W1697302009 abstract "In this paper we study the effect of temperature in 150 (±5) and 80 (±5) nm p-ZnTe thin- films immersed in 60 mg Cu(NO3)2-3H2O/150 ml (H2O) for 1 minute, and heated at 200 and 300 °C for 30 minutes. Active layers were deposited by pulsed-laser deposition (PLD) at room temperature. Electrical parameters in un-doped films were around 108 ̶ 109 Ω and these values decreased to ~ 103Ω when the films were immersed in a Cu solution. The Cu-doped samples heated at 300 °C showed a completely homogeneous doping. X-ray diffraction (XRD) patterns showed the orthorhombic structure at 200 and 300 °C." @default.
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• W1697302009 date "2015-08-05" @default.
• W1697302009 modified "2023-10-17" @default.
• W1697302009 title "Effect of Temperature on Cu-doped p-ZnTe Thin-Films" @default.
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• W1697302009 doi "https://doi.org/10.24297/jap.v10i1.1338" @default.
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