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• W1703990253 abstract "We systematically investigate the fabrication and dry-release technology for a high aspect ratio (HAR) structure with vertical and smooth silicon etching sidewalls. One-hundred-micrometer silicon on insulator (SOI) wafers are used in this work. By optimizing the process parameters of inductively coupled plasma deep reactive-ion etching, a HAR (∼25∶1) structure with a microtrench width of 4 μm has been demonstrated. A perfect etching profile has been obtained in which the structures present an almost perfect verticality of 0.10 μm and no sidewall scallops. The root-mean square roughness of silicon sidewalls is 20 to 29 nm. An in situ dry-release method using notching effect is employed after etching. By analysis, we found that the final notch length is typically an aspect-ratio-dependent process. The structure designed in this work has been successfully released by this in situ dry-release method, and the released bottom roughness effectively prohibits the stiction mechanism. The results demonstrate potential applications for design and fabrication of HAR SOI MEMS/MOEMS." @default.
• W1703990253 created "2016-06-24" @default.
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• W1703990253 date "2015-06-23" @default.
• W1703990253 modified "2023-10-11" @default.
• W1703990253 title "Fabrication of high aspect ratio structure and its releasing for silicon on insulator MEMS/MOEMS device application" @default.
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• W1703990253 doi "https://doi.org/10.1117/1.jmm.14.2.024502" @default.
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