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- W1710499504 abstract "In immersion lithography process, film stacking architecture will be necessary due to film peeling. However, thearchitecture will restrict lithographic area within a wafer due to top side EBR accuracyIn this paper, we report an effective film stacking architecture that also allows maximum lithographic area. This studyused a new bevel rinse system on RF3 for all materials to make suitable film stacking on the top side bevel. Thisevaluation showed that the new bevel rinse system allows the maximum lithographic area and a clean wafer edge.Patterning defects were improved with suitable film stacking." @default.
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- W1710499504 date "2008-03-14" @default.
- W1710499504 modified "2023-09-25" @default.
- W1710499504 title "Film stacking architecture for immersion lithography process" @default.
- W1710499504 doi "https://doi.org/10.1117/12.772411" @default.
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