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- W1710515555 abstract "A process to make self-aligned top-gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) on polyimide foil is presented. The source/drain (S/D) region's parasitic resistance reduced during the SiN interlayer deposition step. The sheet resistivity of S/D region after exposure to SiN interlayer deposition decreased to 1.5 kΩ/□. TFTs show field-effect mobility of 12.0 cm2/(V.s), sub-threshold slope of 0.5 V/decade, and current ratio (ION/OFF) of >107. The threshold voltage shifts of the TFTs were 0.5 V in positive (+1.0 MV/cm) bias direction and 1.5 V in negative (−1.0 MV/cm) bias direction after extended stressing time of 104 s. We achieve a stage-delay of ~19.6 ns at VDD = 20 V measured in a 41-stage ring oscillator. A top-emitting quarter-quarter-video-graphics-array active-matrix organic light-emitting diode display with 85 ppi (pixels per inch) resolution has been realized using only five lithographic mask steps. For operation at 6 V supply voltage (VDD), the brightness of the display exceeds 150 cd/m2." @default.
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- W1710515555 date "2014-10-01" @default.
- W1710515555 modified "2023-09-30" @default.
- W1710515555 title "Circuits and AMOLED display with self-aligned a-IGZO TFTs on polyimide foil" @default.
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- W1710515555 doi "https://doi.org/10.1002/jsid.281" @default.
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