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• W1711113574 abstract "Tungsten (W) thin films were deposited using the modified chemical vapor deposition (CVD), the so-called pulsed CVD, and their properties were characterized as nucleation layers for the chemical vapor deposited W (CVD-W) technology of sub-50 nm memory devices. W growth per cycle was extremely linear with a higher growth rate of as compared to that of the atomic layer deposition (ALD) process using the same chemistry. From the X-ray diffractometry, the pulsed CVD-W film was formed as an amorphous structure, which was the same as the atomic layer deposited W. This led to the formation of a low resistivity bulk CVD-W film deposited on it with the grain size of at 200 nm thick film, and its resistivity was further decreased with the post-treatment before the deposition of bulk CVD-W film ( at a 50 nm thick film). However, we found that the adhesion performances of CVD-W growing on the -based pulsed CVD-W nucleation layer were significantly degraded as both the deposition temperature of the nucleation layer and the post-treatment time increased. High resolution transmission electron microscopy and energy-dispersive spectroscopy analysis clearly demonstrated that a discontinuous boron layer was formed at the bulk CVD-W/nucleation layer interface, which was dominantly due to the decomposition during the post-treatment. We strongly suggest that a boron-containing discontinuous layer degrades the adhesion properties of CVD-W films growing on it. Considering the thermodynamics of the decomposition, we can improve the adhesion properties by increasing the flow rate at the post-treatment step." @default.
• W1711113574 created "2016-06-24" @default.
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• W1711113574 date "2009-01-01" @default.
• W1711113574 modified "2023-10-06" @default.
• W1711113574 title "Pulsed CVD-W Nucleation Layer Using WF[sub 6] and B[sub 2]H[sub 6] for Low Resistivity W" @default.
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• W1711113574 doi "https://doi.org/10.1149/1.3155430" @default.
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