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- W1718559615 abstract "We report on the growth of high quality epitaxial FexAl1−x on (In,Al)As/InP with x=0.45–0.80 and thicknesses up to 1000 Å, and on overgrowth of III–V semiconductor on the metal. Buffer layers of (In,Al)As were grown on InP substrates in a III–V growth chamber, then transferred to an attached ultrahigh vacuum chamber with dual e-beam evaporators, where FexAl1−x layers were grown by co-evaporation. Despite a large lattice mismatch of ∼1%–2% between the metal and the semiconductor, high quality layers of FexAl1−x with thicknesses of up to 1000 Å were grown. The metal layers showed bright, streaky reflection high-energy electron diffraction patterns, were specular under Nomarski microscopy, and had roughnesses of ∼1–2 monolayers as measured by atomic force microscopy. High resolution x-ray diffraction showed that even at 1000 Å, the layers were fully strained, and Pendellosung oscillations were observed, indicating high crystalline quality. Metal layers over ∼200 Å thick had resistivities in the range of those expected of bulk layers (50–100 μΩ cm). Reflectivities greater than 90% for λ=4–20 μm were observed for metal layers 1000 Å thick. Overgrowth of (In,Ga)As and (In,Al)As on the metal layers shows a marked sensitivity to As overpressure, possibly due to an In surface-riding layer on top of the metal." @default.
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- W1718559615 date "1999-05-01" @default.
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- W1718559615 title "Growth and characterization of epitaxial Fe[sub x]Al[sub 1−x]/(In,Al)As/InP and III–V/Fe[sub x]Al[sub 1−x]/(In,Al)As/InP structures" @default.
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- W1718559615 doi "https://doi.org/10.1116/1.590742" @default.
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