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- W1728542874 abstract "This paper reports the comparison of radiation responsivity of P-MOSFET vs. P-I-N Diode functioned as a radiation sensor and fabricated in Thailand. Radiation sensing field effect transistor (RADFET) and diode dosimeter are well known and used to measure the radiation dose given to patients during radiotherapy treatment, measured in medical, and other applications. The drawback of this issue is its high cost because most of products are imported. Due to the capability to fabricate semi-conductor devices in Thailand, this work has initiated an investigation to find a suitability and possibility to produce RADFET and diode dosimeter using a local foundry hence long-term and sustainable knowledge. P-MOSFET of 25nm gate oxide thickness and P-I-N diode were carefully studied and tested with various radiation doses. The measurements reveal that the threshold voltage (V TH ) of P-MOSFET and the breakdown voltage (V B ) of PI-N diode change according to applied radiation dose. Finally, the effect of radiation dose and temperature effects were reported." @default.
- W1728542874 created "2016-06-24" @default.
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- W1728542874 date "2009-07-01" @default.
- W1728542874 modified "2023-09-24" @default.
- W1728542874 title "Comparison of the Radiation Responsivity of P-MOSFET vs P-I-N Diode : fabricated in Thailand" @default.
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