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- W1748650694 abstract "This paper presents a high-Q parallel plate resonator for V-band in MCM-D technology. The resonator is defined by two cylindrical parallel plates sandwiching a stack composed of benzo-cyclobutene (BCB) and high resistivity silicon (HR-Si). The TM010 mode of resonance is excited by a patch feed. This is a low technological complexity implementation offering a high-Q resonator alternative, at V-band for e.g. oscillator’s reference. Planar passive components offer limited performance at mm-wave in terms of unloaded quality factor (Qo), which is limited to 30 below 10 GHz and is decreasing with an increasing operating frequency [1]. However, very good performance characterizes cavity resonators, the latest require advanced micromachining technologies for manufacturing at V-band, e.g. micromachined metalized cavities or substrate integrated vias. Alternatively, as proposed in this paper, parallel plate resonators represent instead a low technological complexity implementation. The parallel plate resonators are realized in IMEC’s MCM-D, a cross section of which is shown in Fig. 1a [2]. The MCM-D is composed of three metallizations realized by successive sputtering on benzo-cyclobutene (BCB), ( = 2.65, tan = 0.008). The first layer, 1 μm Al is sputtered directly on top of the high resistivity silicon (HR-Si), ( = 11.9, tan = 0.0026) and is covered by 4.4 μm BCB. The second layer, 5 μm Cu is covered by 8.5 μm BCB. The third layer is an electroplated stack of 10 μm Cu/Ni/Au. The stack of BCB and HR-Si results in a composite relative permittivity ( which is evaluated using (1). Assuming a magnetic wall at the edges of the resonator, the resonance frequency is given by (2), following [3]." @default.
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- W1748650694 date "2012-01-01" @default.
- W1748650694 modified "2023-09-27" @default.
- W1748650694 title "High-Q parallel plate resonator for V-band in MCM-D technology" @default.
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