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• W1752202212 abstract "AlGaN/GaN high electron mobility transistors are extremely promising for microwave power generation from S band up to Ka band. The list of potential applications includes commercial wireless base stations, phased array radar, satellite-based communication systems, digital radio and power flow control. Results to date show excellent power performance, with densities>10W.mm/sub -1/ and high efficiency. In this paper we give a brief overview of the field, report on use of single-crystal oxide layers to provide effective surface passivation for HEMTs and then discuss some new spin-based GaN devices that may have a role in expanding the functionality of nitride electronics and photonics." @default.
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• W1752202212 date "2004-07-08" @default.
• W1752202212 modified "2023-09-25" @default.
• W1752202212 title "Progress and challenges of GaN-based microwave HEMTs, amplifiers and novel spin" @default.
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• W1752202212 doi "https://doi.org/10.1109/edmo.2003.1259961" @default.
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