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- W175260058 abstract "We have grown CdxPb1−xS epitaxial films on heated cleaved or polished NaCl substrates using a two source apparatus. The technique is substantially the same as that used by Bis and Zemel for the growth of PbSexTe1−x films. The composition of the films was determined both by the weight loss of the sources and the lattice constant determined by Bragg diffractometry. The films were good single crystals according to Laue patterns obtained on several specimens. The composition range was 0≤×≤0.1. Films were 1.5–6 μ in thickness. The optical transmission and reflection were measured from 2000 A to 40 μ. There was a systematic increase in the energy of the fundamental absorption edge as x increased. This is in marked contrast to the behavior of SnxPb1−xSe and SnxPb1−xTe where increasing x leads to a decreasing energy gap. Electrical data on films where x is small indicate that the mobility and carrier concentrations are quite reasonable. High resistivities were encountered on materials with x values near to 0.1. Some photosensitivity was observed at room temperature. Values for the index of refraction have also been obtained.We have grown CdxPb1−xS epitaxial films on heated cleaved or polished NaCl substrates using a two source apparatus. The technique is substantially the same as that used by Bis and Zemel for the growth of PbSexTe1−x films. The composition of the films was determined both by the weight loss of the sources and the lattice constant determined by Bragg diffractometry. The films were good single crystals according to Laue patterns obtained on several specimens. The composition range was 0≤×≤0.1. Films were 1.5–6 μ in thickness. The optical transmission and reflection were measured from 2000 A to 40 μ. There was a systematic increase in the energy of the fundamental absorption edge as x increased. This is in marked contrast to the behavior of SnxPb1−xSe and SnxPb1−xTe where increasing x leads to a decreasing energy gap. Electrical data on films where x is small indicate that the mobility and carrier concentrations are quite reasonable. High resistivities were encountered on materials with x values near to 0.1. S..." @default.
- W175260058 created "2016-06-24" @default.
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- W175260058 date "1969-07-01" @default.
- W175260058 modified "2023-09-26" @default.
- W175260058 title "Properties of CdxPb1−xS Epitaxial Films" @default.
- W175260058 doi "https://doi.org/10.1116/1.1315665" @default.
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