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- W1752644165 abstract "We carried out a nitrogen plasma treatment process to obtain N‐doped ZnO single crystal. The treated sample showed an acceptor related emission located at 3.354 eV when excited by a 325‐nm He–Cd laser at 85 K. Raman spectra revealed the formation of a bond between Zn and N atoms. The surface work function indicated increasing of hole concentration of the N‐plasma‐treated ZnO. By constructing a ZnO‐based homojunction, the I – V curve displayed perfect rectification performance." @default.
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- W1752644165 date "2015-01-30" @default.
- W1752644165 modified "2023-10-17" @default.
- W1752644165 title "Nitrogen-doped ZnO obtained by nitrogen plasma treatment" @default.
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- W1752644165 doi "https://doi.org/10.1002/pssa.201431779" @default.
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