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• W1752807896 endingPage "830" @default.
• W1752807896 startingPage "826" @default.
• W1752807896 abstract "In this paper, the electrical properties of top‐gated thin‐film transistors with low‐cost chemical bath deposition (CBD) of ZnO as active material and a high‐ k rare‐earth oxide La 2 O 3 as gate dielectric have been reported. The source‐drain and gate electrodes and dielectric layers are fabricated by thermal evaporation techniques in high vacuum of the order of 10 −6 Torr in a coplanar electrode structure. The channel length of the TFT is of 50 μm. The fabricated TFTs are annealed at 500 °C in air. The TFTs exhibit a field effect mobility 0.58 (cm 2 V −1 s −1 ). Use of a high dielectric constant (high‐ k ) gate insulator reduces the threshold voltage and subthreshold swing of the TFTs. The TFTs exhibit a low threshold voltage of 4 V. The calculated values of gain–bandwidth product and subthreshold swing are also evaluated and presented. The ON/OFF ratio of the TFT is found to be 10 6 ." @default.
• W1752807896 created "2016-06-24" @default.
• W1752807896 creator A5028596703 @default.
• W1752807896 creator A5033623787 @default.
• W1752807896 creator A5038937857 @default.
• W1752807896 creator A5041466236 @default.
• W1752807896 creator A5042601180 @default.
• W1752807896 date "2015-01-29" @default.
• W1752807896 modified "2023-10-06" @default.
• W1752807896 title "ZnO TFTs prepared by chemical bath deposition technique with high-<i>k</i>La₂O₃gate dielectric annealed in ambient atmosphere" @default.
• W1752807896 cites W1580491811 @default.
• W1752807896 cites W1972322706 @default.
• W1752807896 cites W1972925243 @default.
• W1752807896 cites W1976250511 @default.
• W1752807896 cites W1979041658 @default.
• W1752807896 cites W1997891353 @default.
• W1752807896 cites W1997894759 @default.
• W1752807896 cites W2002093212 @default.
• W1752807896 cites W2015710209 @default.
• W1752807896 cites W2023010144 @default.
• W1752807896 cites W2050123431 @default.
• W1752807896 cites W2059208448 @default.
• W1752807896 cites W2066130678 @default.
• W1752807896 cites W2074303377 @default.
• W1752807896 cites W2101543427 @default.
• W1752807896 cites W2115636662 @default.
• W1752807896 cites W2131559039 @default.
• W1752807896 cites W2134960271 @default.
• W1752807896 cites W2166239777 @default.
• W1752807896 cites W4382140455 @default.
• W1752807896 doi "https://doi.org/10.1002/pssa.201431605" @default.
• W1752807896 hasPublicationYear "2015" @default.
• W1752807896 type Work @default.
• W1752807896 sameAs 1752807896 @default.
• W1752807896 citedByCount "10" @default.
• W1752807896 countsByYear W17528078962015 @default.
• W1752807896 countsByYear W17528078962016 @default.
• W1752807896 countsByYear W17528078962017 @default.
• W1752807896 countsByYear W17528078962018 @default.
• W1752807896 countsByYear W17528078962019 @default.
• W1752807896 countsByYear W17528078962020 @default.
• W1752807896 countsByYear W17528078962021 @default.
• W1752807896 countsByYear W17528078962022 @default.
• W1752807896 countsByYear W17528078962023 @default.
• W1752807896 crossrefType "journal-article" @default.
• W1752807896 hasAuthorship W1752807896A5028596703 @default.
• W1752807896 hasAuthorship W1752807896A5033623787 @default.
• W1752807896 hasAuthorship W1752807896A5038937857 @default.
• W1752807896 hasAuthorship W1752807896A5041466236 @default.
• W1752807896 hasAuthorship W1752807896A5042601180 @default.
• W1752807896 hasConcept C119599485 @default.
• W1752807896 hasConcept C121332964 @default.
• W1752807896 hasConcept C127413603 @default.
• W1752807896 hasConcept C133386390 @default.
• W1752807896 hasConcept C147789679 @default.
• W1752807896 hasConcept C16317505 @default.
• W1752807896 hasConcept C165801399 @default.
• W1752807896 hasConcept C166972891 @default.
• W1752807896 hasConcept C171250308 @default.
• W1752807896 hasConcept C172385210 @default.
• W1752807896 hasConcept C17525397 @default.
• W1752807896 hasConcept C185592680 @default.
• W1752807896 hasConcept C192562407 @default.
• W1752807896 hasConcept C195370968 @default.
• W1752807896 hasConcept C2361726 @default.
• W1752807896 hasConcept C2779227376 @default.
• W1752807896 hasConcept C30646810 @default.
• W1752807896 hasConcept C31500677 @default.
• W1752807896 hasConcept C49040817 @default.
• W1752807896 hasConcept C87359718 @default.
• W1752807896 hasConcept C97355855 @default.
• W1752807896 hasConceptScore W1752807896C119599485 @default.
• W1752807896 hasConceptScore W1752807896C121332964 @default.
• W1752807896 hasConceptScore W1752807896C127413603 @default.
• W1752807896 hasConceptScore W1752807896C133386390 @default.
• W1752807896 hasConceptScore W1752807896C147789679 @default.
• W1752807896 hasConceptScore W1752807896C16317505 @default.
• W1752807896 hasConceptScore W1752807896C165801399 @default.
• W1752807896 hasConceptScore W1752807896C166972891 @default.
• W1752807896 hasConceptScore W1752807896C171250308 @default.
• W1752807896 hasConceptScore W1752807896C172385210 @default.
• W1752807896 hasConceptScore W1752807896C17525397 @default.
• W1752807896 hasConceptScore W1752807896C185592680 @default.
• W1752807896 hasConceptScore W1752807896C192562407 @default.
• W1752807896 hasConceptScore W1752807896C195370968 @default.
• W1752807896 hasConceptScore W1752807896C2361726 @default.
• W1752807896 hasConceptScore W1752807896C2779227376 @default.
• W1752807896 hasConceptScore W1752807896C30646810 @default.
• W1752807896 hasConceptScore W1752807896C31500677 @default.
• W1752807896 hasConceptScore W1752807896C49040817 @default.
• W1752807896 hasConceptScore W1752807896C87359718 @default.
• W1752807896 hasConceptScore W1752807896C97355855 @default.
• W1752807896 hasIssue "4" @default.
• W1752807896 hasLocation W17528078961 @default.
• W1752807896 hasOpenAccess W1752807896 @default.
• W1752807896 hasPrimaryLocation W17528078961 @default.
• W1752807896 hasRelatedWork W1896204962 @default.
• W1752807896 hasRelatedWork W1984876135 @default.

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