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• W1754611656 abstract "A new Pt-InAlP metal oxide semiconductor Schottky diode hydrogen sensor with highly sensitive hydrogen detection among wide operating temperature regime is demonstrated and studied. Experimentally, the studied hydrogen sensor can be operated systematically either under forward or reverse bias conditions. At , the relatively hydrogen detection ratio value is increased from 108.8% (107.4%) to 943.1% (1337.3%), under the forward (reverse) bias of , when the hydrogen concentration is increased from /air. Note that even an extremely low hydrogen concentration of /air can be effectively detected at the temperature of ." @default.
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• W1754611656 date "2006-01-01" @default.
• W1754611656 modified "2023-10-18" @default.
• W1754611656 title "On the Hydrogen Sensing Properties of a Pt-Oxide-In[sub 0.5]Al[sub 0.5]P Schottky Diode" @default.
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• W1754611656 doi "https://doi.org/10.1149/1.2345549" @default.
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