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Matches in SemOpenAlex for { <https://semopenalex.org/work/W1756752612> ?p ?o ?g. }

• W1756752612 endingPage "116" @default.
• W1756752612 startingPage "1" @default.
• W1756752612 abstract "In this dissertation, we propose a new VALFCP (variable amplitude low-frequency charge pumping) technique to characterize the nitride trap energy and spatial distributions in Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) flash memory cells. Besides, the VALFCP technique is utilized to investigate effects of P/E cycles on nitride/oxide trap properties. We also study the effects of dopant fluctuation on SONOS cell retention by using 2D TCAD simulations. In chapter 2, we propose a new VALFCP technique including a modified charge pumping measurement methodology and a generalized numerical model, which allows extracting the spatial and energy trap distributions from the charge pumping data. A numerical model based on Shockley-Read-Hall-like electron tunneling capture is used to correlate a charge pumping current with nitride trap energy and position. By changing frequency and pulse amplitude in charge pumping measurement, a nitride trap density as a function of trap position and energy can be extracted. In chapter 3, influences of program/erase (P/E) cycles on the defect generation in a SONOS flash memory cell are studied by using the VALFCP technique. We observe that P/E cycles would generate new oxide and nitride traps, and degraded cell retention is observed. Besides, the increase of oxide and nitride trap densities follows a power law behavior as a function of P/E cycles. We also observe that these stress-created oxide and nitride traps are unstable and will be eliminated rapidly during high temperature storage. In chapter 4, the effects of discrete dopant fluctuation in sub-45-nm SONOS flash memory cells are studied. In addition to the well-known fluctuation in threshold voltage, the wide threshold voltage distribution also affects cell retention, which results in a severe reliability problem in planar SONOS flash memory cells beyond the 22 nm generation. Similar discrete dopant effects are observed in the fin field-effect transistor (FinFET) structure. The FinFET SONOS flash memory cell having a nearly un-doped channel is shown to be promising for sub-22-nm SONOS technologies." @default.
• W1756752612 created "2016-06-24" @default.
• W1756752612 creator A5042655031 @default.
• W1756752612 date "2010-01-01" @default.
• W1756752612 modified "2023-09-27" @default.
• W1756752612 title "Investigation of Reliability Issues in a SONOS Flash Memory Cell" @default.
• W1756752612 hasPublicationYear "2010" @default.
• W1756752612 type Work @default.
• W1756752612 sameAs 1756752612 @default.
• W1756752612 citedByCount "0" @default.
• W1756752612 crossrefType "journal-article" @default.
• W1756752612 hasAuthorship W1756752612A5042655031 @default.
• W1756752612 hasConcept C100780047 @default.
• W1756752612 hasConcept C119599485 @default.
• W1756752612 hasConcept C120398109 @default.
• W1756752612 hasConcept C120665830 @default.
• W1756752612 hasConcept C121099081 @default.
• W1756752612 hasConcept C121332964 @default.
• W1756752612 hasConcept C124296912 @default.
• W1756752612 hasConcept C127413603 @default.
• W1756752612 hasConcept C131017901 @default.
• W1756752612 hasConcept C149635348 @default.
• W1756752612 hasConcept C153294291 @default.
• W1756752612 hasConcept C165801399 @default.
• W1756752612 hasConcept C171250308 @default.
• W1756752612 hasConcept C172385210 @default.
• W1756752612 hasConcept C177950962 @default.
• W1756752612 hasConcept C180205008 @default.
• W1756752612 hasConcept C191897082 @default.
• W1756752612 hasConcept C191952053 @default.
• W1756752612 hasConcept C192562407 @default.
• W1756752612 hasConcept C194760766 @default.
• W1756752612 hasConcept C24326235 @default.
• W1756752612 hasConcept C2776531357 @default.
• W1756752612 hasConcept C2776638159 @default.
• W1756752612 hasConcept C2777431650 @default.
• W1756752612 hasConcept C2777526259 @default.
• W1756752612 hasConcept C2779227376 @default.
• W1756752612 hasConcept C2779851234 @default.
• W1756752612 hasConcept C49040817 @default.
• W1756752612 hasConcept C544956773 @default.
• W1756752612 hasConcept C57863236 @default.
• W1756752612 hasConceptScore W1756752612C100780047 @default.
• W1756752612 hasConceptScore W1756752612C119599485 @default.
• W1756752612 hasConceptScore W1756752612C120398109 @default.
• W1756752612 hasConceptScore W1756752612C120665830 @default.
• W1756752612 hasConceptScore W1756752612C121099081 @default.
• W1756752612 hasConceptScore W1756752612C121332964 @default.
• W1756752612 hasConceptScore W1756752612C124296912 @default.
• W1756752612 hasConceptScore W1756752612C127413603 @default.
• W1756752612 hasConceptScore W1756752612C131017901 @default.
• W1756752612 hasConceptScore W1756752612C149635348 @default.
• W1756752612 hasConceptScore W1756752612C153294291 @default.
• W1756752612 hasConceptScore W1756752612C165801399 @default.
• W1756752612 hasConceptScore W1756752612C171250308 @default.
• W1756752612 hasConceptScore W1756752612C172385210 @default.
• W1756752612 hasConceptScore W1756752612C177950962 @default.
• W1756752612 hasConceptScore W1756752612C180205008 @default.
• W1756752612 hasConceptScore W1756752612C191897082 @default.
• W1756752612 hasConceptScore W1756752612C191952053 @default.
• W1756752612 hasConceptScore W1756752612C192562407 @default.
• W1756752612 hasConceptScore W1756752612C194760766 @default.
• W1756752612 hasConceptScore W1756752612C24326235 @default.
• W1756752612 hasConceptScore W1756752612C2776531357 @default.
• W1756752612 hasConceptScore W1756752612C2776638159 @default.
• W1756752612 hasConceptScore W1756752612C2777431650 @default.
• W1756752612 hasConceptScore W1756752612C2777526259 @default.
• W1756752612 hasConceptScore W1756752612C2779227376 @default.
• W1756752612 hasConceptScore W1756752612C2779851234 @default.
• W1756752612 hasConceptScore W1756752612C49040817 @default.
• W1756752612 hasConceptScore W1756752612C544956773 @default.
• W1756752612 hasConceptScore W1756752612C57863236 @default.
• W1756752612 hasLocation W17567526121 @default.
• W1756752612 hasOpenAccess W1756752612 @default.
• W1756752612 hasPrimaryLocation W17567526121 @default.
• W1756752612 hasRelatedWork W1979322072 @default.
• W1756752612 hasRelatedWork W1981217375 @default.
• W1756752612 hasRelatedWork W1991760304 @default.
• W1756752612 hasRelatedWork W2007259739 @default.
• W1756752612 hasRelatedWork W2010895349 @default.
• W1756752612 hasRelatedWork W2016262375 @default.
• W1756752612 hasRelatedWork W2048016800 @default.
• W1756752612 hasRelatedWork W2070799969 @default.
• W1756752612 hasRelatedWork W2094908668 @default.
• W1756752612 hasRelatedWork W2107969821 @default.
• W1756752612 hasRelatedWork W2118678568 @default.
• W1756752612 hasRelatedWork W2121538370 @default.
• W1756752612 hasRelatedWork W2121781414 @default.
• W1756752612 hasRelatedWork W2129465291 @default.
• W1756752612 hasRelatedWork W2147244455 @default.
• W1756752612 hasRelatedWork W2162516177 @default.
• W1756752612 hasRelatedWork W2164605993 @default.
• W1756752612 hasRelatedWork W2167817156 @default.
• W1756752612 hasRelatedWork W3105769692 @default.
• W1756752612 hasRelatedWork W2882122287 @default.
• W1756752612 isParatext "false" @default.
• W1756752612 isRetracted "false" @default.
• W1756752612 magId "1756752612" @default.

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