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• W176161972 abstract "Ceria (CeO2) films with fluorite structures were grown on c-axial-oriented GaN/Al2O3 substrates with and without YSZ/TiO2 double-bridge layer using pulse laser molecular beam epitaxy, respectively. The growth behavior was in situ monitored by reflection high-energy electron diffraction (RHEED). The epitaxial orientation relationship was confirmed by the x-ray diffraction (XRD) technique. With the introduction of the YSZ/TiO2 double-buffer layer, high-quality a-axial-oriented CeO2 films were successfully grown on GaN substrate. The epitaxial relation-ships of this heterostructure were CeO2(200)∥YSZ(200)∥TiO2(200)∥GaN(0002) and CeO2[010]∥YSZ[010]//TiO2[001]//GaN[112¯0]. XRD and RHEED analyses reveal in-plane tensile strain in CeO2 film, which is mainly caused by lattice mismatch. The in-plane alignment of CeO2 film on YSZ/TiO2 bridge layer is attributed to the interface stress between the film and substrate. Furthermore, without the YSZ/TiO2 buffer layer, CeO2 film directly grown on GaN was oriented along the [111] direction. The different out-of-plane orientations of CeO2 films on GaN substrate could be explained by the different in-plane crystallographic symmetries of templates." @default.
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• W176161972 date "2011-04-05" @default.
• W176161972 modified "2023-10-17" @default.
• W176161972 title "Epitaxial growth of (100)-oriented ceria film on c-plane GaN/Al2O3 using YSZ/TiO2 buffer layers by pulse laser molecular beam epitaxy" @default.
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• W176161972 doi "https://doi.org/10.1116/1.3574523" @default.
• W176161972 hasPublicationYear "2011" @default.
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