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• W1765576277 abstract "We describe a theoretical methodology for screening potential gate dielectric materials. A recently proposed method for constructing realistic structural models of the Si-dielectric interface is used to generate the Si-SiO/sub 2/-Si and Si-SiON-SiO/sub 2/-Si model metal-oxide-semiconductor (MOS) structures. We use a ballistic transport approach to investigate the low bias leakage through these ultrathin dielectric layers. We investigate the thermodynamic stability of the SrTiO/sub 3/-Si interface, and present the first ab-initio study of the structure and electronic properties of crystalline HfO/sub 2/." @default.
• W1765576277 created "2016-06-24" @default.
• W1765576277 creator A5010833946 @default.
• W1765576277 creator A5084717657 @default.
• W1765576277 date "2002-11-11" @default.
• W1765576277 modified "2023-09-26" @default.
• W1765576277 title "Theoretical investigation of gate dielectrics" @default.
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• W1765576277 doi "https://doi.org/10.1109/iscs.2000.947146" @default.
• W1765576277 hasPublicationYear "2002" @default.
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