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- W1768929584 abstract "本論文的主要目的是探討具非晶接面及溝渠式電極之矽質金屬-半導體-金屬光偵測器的暗電流基本機制，並且藉以降低元件之暗電流而提升其訊雜比。利用梯度高能隙非晶合成物結構及附加不鏽鋼濾網的電漿助長化學氣相沈積系統沈積非晶薄膜等技巧可降低元件的暗電流，且效果良好。非晶位障層對金屬-半導體-金屬光偵測器而言，不僅可以降低暗電流，更可提升暗電流對溫度的穩定性。" @default.
- W1768929584 created "2016-06-24" @default.
- W1768929584 creator A5000601397 @default.
- W1768929584 creator A5056570604 @default.
- W1768929584 date "2002-06-24" @default.
- W1768929584 modified "2023-09-24" @default.
- W1768929584 title "具非晶異質接面及溝渠式電極之矽質金屬-半導體-金屬光偵測器的暗電流特性" @default.
- W1768929584 hasPublicationYear "2002" @default.
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