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- W1775240637 abstract "The effects of oxygen partial pressure and a Cu catalyst on the growth of Zn 2 GeO 4 nanowires (NWs) on Si substrates by thermal evaporation of ZnS and Ge powders at 1000-1100°C in Ar were studied. The Zn 2 GeO 4 NWs could grow on the bare Si substrates at 650-800°C in Ar, while a deposited Cu layer further enhanced their growth, forming the Cu-doped Zn 2 GeO 4 NWs. The growth of both the Zn 2 GeO 4 and Cu-doped Zn 2 GeO 4 NWs followed the self-catalyzed vapor-liquid-solid process. In Ar/O 2 (3%), GeO 2 nanoparticles instead of Zn 2 GeO 4 NWs predominantly formed on the Si substrates, revealing that the higher oxygen partial pressure in Ar enhanced the growth of GeO 2 . The green emission peak of Cu-doped Zn 2 GeO 4 NWs showed a blueshift of about 25 nm relative to that of the undoped Zn 2 GeO 4 NWs." @default.
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- W1775240637 date "2010-01-01" @default.
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- W1775240637 title "Growth of Zn[sub 2]GeO[sub 4] and Cu-Doped Zn[sub 2]GeO[sub 4] Nanowires by Thermal Evaporation" @default.
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- W1775240637 doi "https://doi.org/10.1149/1.3305795" @default.
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